Plating bath and method for depositing a metal layer on a substrate

ABSTRACT

A metal plating bath and method of plating a metal on a substrate where the metal plating bath contains heteroatom organic compounds that prevent or inhibit the consumption of metal plating bath additives. The metal plating bath additives improve the brightness of plated metal as well as ductility, micro-throwing power and micro-throwing power of the plating bath. The addition of the additive consumption inhibiting heteroatom organic compounds improves the physical properties of the plated metal as well as the efficiency of the plating process. The heteroatom organic compounds may contain sulfur, oxygen or nitrogen heteroatoms.

BACKGROUND OF THE INVENTION

[0001] The present invention is directed to a plating bath and method for improving deposition of a metal on a substrate. More specifically, the present invention is directed to a plating bath and method for improving deposition of a metal on a substrate by including heteroatom containing organic compounds in the plating bath that prevent the degradation of plating bath components.

[0002] Deposition of a metal on a substrate is used in a variety of industrial applications such as electroforming, electrorefining, manufacture of copper powder, electroplating, electroless plating and the like. The process of plating a substrate with a metal is used in the production of decorative articles for sanitary appliances, automobile parts, jewelry and furniture fittings, many electrical devices and circuits such as printed wiring and circuit boards, electrolytic foil, silicon wafer plating, and the like. Examples of metals that may be plated on a substrate include copper, gold, silver, palladium, platinum, zinc, tin, nickel, lead, cobalt and alloys thereof. Although many metals are employed in plating in the production of decorative articles and electrical devices, copper is one of the most common metals plated. The electronics industry extensively employs copper as a metal in the manufacture of printed wiring and circuit boards as well as other electronic articles.

[0003] The electronics industry has a number of requirements for copper deposits on printed wiring boards. For example, copper layers can not form any cracks when subject to thermal shock (immersed at least once for 10 sec. in liquid tin/lead solder at 288° C.). In addition, the copper layers must be smooth, and as uniformly thick at all locations of a coated surface. Also, deposition procedures must be easy to manage and economical.

[0004] Anodes, such as copper anodes, that may decompose during electroplating are often used in the electroplating of copper. Such anodes are known in the industry as soluble anodes. Soluble anodes may be in the form of plates, bars or spheres. The plates and bars are connected to a power supply with a suitable fastening means. The spheres come in baskets that often consist of titanium. The spheres are connected to a power supply with suitable fastening means. Such anodes decompose at about the same rate during deposition as the copper is deposited from the deposition bath, the amount of copper in the deposition solution remains about constant. Thus, copper replenishment is not necessary.

[0005] Another type of anode is the insoluble anode. Exterior dimensions of insoluble anodes do not change during metal deposition process. Such anodes consist of inert materials such as titanium or lead that can be coated with catalytic metals such as platinum to prevent high anodic overvoltages. Insoluble anodes are preferred over the soluble anodes in the production of printed wiring and circuit boards. Electroplating processes employing insoluble anodes are more versatile than those using consumable electrodes, permit higher plating speeds, require smaller apparatus size, ease of maintenance, improved solution flow and agitation and allow anodes to be placed close to the cathode. Particularly advantageous is the fact that the insoluble anode does not change size (i.e., cell geometry remains fixed). Thus, more uniform plating results are obtained. In addition, copper salts used to provide a source of copper are often available as products of etching procedures associated with the production of copper plated devices. For example, in the production of circuit boards, a copper layer is put down over an entire surface of an insulating substrate and part of the copper etched off to produce the circuit board of interest.

[0006] Plating metal on a substrate, such as electroplating with copper, is used extensively in a variety of manufacturing procedures. Copper plating is used to prevent corrosion on various surfaces (i.e., iron surfaces), as a binding layer for additional metal layers, to increase electrical or thermal conductivity and to provide conducting paths in many electrical applications. Electroplating with copper is employed in the manufacture of electrical devices such as circuit boards, integrated circuits, electrical contact surfaces and the like.

[0007] Plating metal is a complex process that involves multiple ingredients in a plating bath. In addition to metal salts that provide a source of metal, pH adjusters and surfactants or wetting agents, many plating baths, such as electroplating baths, contain chemical compounds that improve various aspects of the plating process. Such chemical compounds or additives are auxiliary bath components that are used to improve the brightness of the metal plating, the physical properties of the plated metal especially with respect to ductility and the micro-throwing power as well as the macro-throwing power of the electroplating bath. Of main concern are additives that have an effect on the bright finish, leveling and uniformity of metal deposition on surfaces. Maintaining bath concentrations of such additives within close tolerances is important to obtain high quality metal deposits. Such additives do breakdown during metal plating. The additives breakdown due to oxidation at the anode, reduction at the cathode and by chemical degradation. When additives breakdown during plating, the breakdown products may result in metal layer deposit characteristics that are less than satisfactory for industry standards. Regular additions of additives based upon empirical rules established by workers in the industry to try and maintain optimum concentrations of the additives have been employed. However, monitoring the concentrations of the additives that improve metal plating is still very difficult because the additives are present in small concentrations, i.e., parts per million of solution, in the plating baths. Also the complex mixtures of the additives and the degraded products formed from the additives during plating complicate the replenishment process. Further, depletion of specific additives is not always constant with time or bath use. Accordingly, the concentration of the specific additives is not accurately known and the level of the additives in the bath eventually diminishes or increases to a level where the additives are out of the acceptable range of tolerance. If the additive content goes too far out of the range of tolerance, the quality of the metal deposit suffers and the deposit may be dull in appearance and/or brittle or powdery in structure. Other consequences include low throwing power and/or plating folds with bad leveling. Electroplating of through-hole interconnections in the manufacture of multi-layer printed circuit boards is an example of where high quality plating is required.

[0008] Stability and lifetime of a plating bath is very important. Increased stability of the additives that improve metal plating leads to longer lifetimes for plating baths. Plating baths having longer lifetimes are economically very important. Frequent replacement of plating baths, as mentioned above, as well as disposal of baths containing degraded additives interrupts metal plating operations. Such interruptions reduce product yield. Accordingly, stable plating baths where breakdown of the additives is prevented or reduced, are highly desirable.

[0009] U.S. Pat. No. 4,469,564 discloses a copper electroplating process that allegedly increases the electroplating bath lifetime. The patent states that the process may be employed with a soluble or insoluble anode. A cation-permeable membrane surrounds the anode to prevent organic additives from contacting the anode and being oxidized by the anode. A disadvantage to such a process is that the cation-permeable membranes are exposed to corrosive chemicals for long periods of time that may cause the membranes to decompose. For example, bath pH ranges may be less than 1.0 to as high as 11.0 and higher. Also, bath pH ranges may fluctuate over time as bath components are consumed or breakdown. Thus, workers in the art must be selective in choosing a membrane with a chemical composition that does not breakdown due to pH fluctuations during electroplating. Additionally, as discussed above, electroplating baths contain a variety of components. Components such as the organic additives or their breakdown products may block pores in the cation-permeable membrane preventing passage of cations through the bath. Thus, workers must shut down the electroplating process and replace the membrane. Both blockage of the pores and shutting down the process lead to inefficiency in metal electroplating.

[0010] Japanese Patent Application 63014886 A2 discloses an acid copper electroplating bath with chloride ions and also containing transition metal ions in amounts of from 0.01-100 g/l. The electroplating bath allegedly does not suffer from organic additive consumption. Such organic additives include brighteners, leveling agents, hardener, malleability and ductility modifiers, and deposition modifiers.

[0011] EP 0402 896 discloses a method of stabilizing an organic additive, such as a brightener, in an acid copper electroplating solution. The process employs a soluble anode of copper chips in a titanium basket. Transition metal salts of manganese, iron, chromium, and titanium are added to the electroplating solution in concentrations of not more than 5 g/l. The transition metals may exist in at least two positive oxidation states, but are substantially present in solution in their lowest common positive oxidation state. The presence in solution of the positive oxidation states of the transition metal ions allegedly stabilizes the organic additives.

[0012] U.S. Pat. No. 6,099,711 discloses an electroplating process employing an insoluble anode where metal ions, such as copper ions, are replenished in the electroplating bath by employing a metal ion generator in the form of a reversible redox system. Because an insoluble anode is employed instead of a soluble anode, metal ions are not replenished in the bath by dissolution of the anode. Thus, the reversible redox system replenishes the metal ions. Iron (II) and iron (III) compounds are used as an electrochemically reversible redox system. Other redox systems disclosed in the patent include metals of titanium, cerium, vanadium, manganese and chrome. Such metals may be added to a copper depositing solution in the form of iron (II) sulfate-heptahydrate, iron (II) sulfate-nonahydrate, titanyl-sulfuric acid, cerium (IV) sulfate, sodium metavanadate, manganese (II) sulfate or sodium chromate. The patent states that the redox systems may be combined.

[0013] In addition to replenishing metal ions in the electroplating bath, the patent states that the process prevents degradation of organic additives to a significant extant. Degradation of large amounts of organic additives in a bath occurs electrolytically at the anode due to the anode potentials. Workers in the art believe that the potential of the iron (II) to Iron (III) redox reaction (about 0.530 V vs. SCE) provides an anode potential low enough to prevent brightener oxidation at the anode. Thus, brightener consumption is reduced. Such organic additives include brighteners, levelers, and wetting agents. Brighteners that are employed include water-soluble sulfur compounds and oxygen-containing high-molecular weight compounds. Other additive compounds include nitrogenous sulfur compounds, polymeric nitrogen compounds and/or polymeric phenazonium compounds.

[0014] Although the patent alleges to replenish metal ions and to reduce brightener consumption, the process, disclosed in the '711 patent, has disadvantages. Iron (III) may be reduced back to iron (II) in the reversible redox reaction instead of oxidizing copper to copper (II). Additionally, there is the problem that iron may build-up in the system over time requiring shut down and cleaning operations. Such operations reduce the efficiency of the process, and raise the cost of the process. Another disadvantage to the process is that the concentrations of the compounds in the redox system must be arranged in such a way that a constant concentration of metal ions is maintained in the deposition solution. Thus, there is a narrow or nonexistent margin of error in the concentrations of redox compounds in the deposition solution for the process to operate. Accordingly, minor changes in the concentrations of the redox compounds may hinder the operation of the process.

[0015] Japanese Patent Application 96199385 discloses an electroplating method and solution containing fluoride-based surfactants and organic additives such as brighteners. Addition of the fluoride-based surfactants allegedly prevents brightener consumption.

[0016] Although there are methods for preventing the degradation of additives in metal plating baths, there is still a need for additional methods of preventing the degradation of bath additives.

SUMMARY OF THE INVENTION

[0017] The present invention is directed to a plating bath containing heteroatom containing organic compounds that prevent the degradation of additives in the plating bath, and a method of plating a metal on a substrate employing the plating baths. Such heteroatom containing organic compounds include compounds having a general formula:

R¹—X—R²

[0018] Where X is —S(O)_(n)—, —S(O)_(n)—S(O)_(p)—, —S(O)_(n)—S(O)_(p)—S(O)_(q)—, —S(O)_(n)—S(O)_(p)—S(O)_(q)—S(O)_(u)—, —S(O)_(n)—S(O)_(p)—S(O)_(q)—S(O)_(u)—S(O)_(v)—, —S(O)_(n)—S(O)_(p)—S(O)_(q)—S(O)_(u)—S(O)_(v)—S(O)_(w)—, —(S(O)_(z))_(m)—(CH₂)_(y)—(S(O)_(z))_(m)— or —SO₂—S—(CH₂)_(y)—S—SO₂—, where n, p, q, u, v, w, z and z′ are each independently an integer of from 0 to 2, and m and m′ are each independently an integer of from 1 to 6, and y is an integer of from 2 to 4; R¹ and R² are each independently halogen; —OH; (C₁-C₂₀) linear, branched, or cyclic alkyl; (C₂-C₂₀) linear, branched, or cyclic alkenyl; (C₂-C₂₀) linear, or branched alkynyl; or (C₁-C₂₀) alkyl-O(C₂-C₃O)₁R⁵, (C₁-C₁₂) alkylphenyl-O(C₂-C₃O)₁R⁵, or -phenyl-O(C₂-C₃O)₁R⁵, where t is an integer of from 1 to 500 and R⁵ is hydrogen, (C₁-C₄) alkyl or phenyl; the alkyl, alkenyl or alkynyl are unsubstituted, or substituted; or

[0019] X is a heteroatom selected from S, O, N, or N substituted with (C₁-C₆) linear or branched alkyl or a tosyl group, and R¹ and R² may be taken together along with the atoms to which they are attached to form a 5 to 18 membered heterocyclic ring that may be unsubstituted or substituted, saturated or unsaturated having 1 to 8 heteroatoms, the heterocyclic ring optionally contains one or more carbonyls.

[0020] The foregoing compounds may be employed in metal plating baths for plating copper, gold, silver, palladium, platinum, cobalt, cadmium, chromium, bismuth, indium, tin, rhodium, ruthenium, iridium, zinc, and alloys thereof. Such metals are provided in metal plating baths as their salts.

[0021] Advantageously, addition of the heteroatom organic compounds that inhibit additive consumption to a plating bath prevents degradation of additives. Thus, the additive consumption inhibiting compounds provide for a plating bath that has a long life, and a method of metal plating that is very efficient. Also, because the compounds of the present invention prevent degradation of the additives, plating baths of the present invention provide for uniform, high brightness metal layers with good physical-mechanical characteristics on substrates.

[0022] Metal plating baths of the present invention may be employed to plate metal layers on any substrate that may be metal plated. Metal plating methods of the present invention involve passing a current between two electrodes immersed in a bath containing dissolved plating metal, bath additives and one or more additive consumption inhibiting compounds of the present invention. Current is passed through the bath until a substrate is plated with a desired thickness of metal.

[0023] The additive consumption inhibiting compounds and methods of the present invention may be employed in any industry where metal plating is used. For example, the metal plating baths may be employed in the manufacture of electrical devices such as printed circuit and wiring boards, integrated circuits, electrical contact surfaces and connectors, electrolytic foil, silicon wafers for microchip applications, semi-conductors and semi-conductor packaging, lead frames, optoelectronics and optoelectronics packaging, solder bumps such as on wafers, and the like. Also, the metal plating baths may be employed for metal plating decorative articles for jewelry, furniture fittings, automobile parts, sanitary appliances, and the like. Further, the additive consumption inhibiting compounds of the present invention may be employed in waste treatment methods.

[0024] A primary objective of the present invention is to provide compounds that inhibit degradation of additives in a metal plating bath.

[0025] Another objective of the present invention is to provide a metal plating bath that has a long life.

[0026] An additional objective of the present invention is to provide for an efficient method for plating a metal on a substrate.

[0027] Still yet, a further objective of the present invention is to provide a method for plating a uniform, high brightness metal layer with good physical-mechanical properties on a substrate.

[0028] Additional objectives and advantages can be ascertained by a person of skill in the art after reading the detailed description of the invention and the appended claims.

BRIEF DESCRIPTION OF THE DRAWINGS

[0029]FIG. 1 is a diagrammatic illustration for treating a workpiece by a vertical method in accordance with the present invention; and

[0030]FIG. 2 is a diagrammatic illustration of an apparatus for treating a workpiece by a horizontal method in accordance with the present invention.

DETAILED DESCRIPTION OF THE INVENTION

[0031] Metal plating baths of the present invention contain heteroatom containing organic compounds that inhibit the consumption of additives added to metal plating baths to improve metal deposition on a substrate. The metal plating baths may be employed in any suitable process for plating a metal on a substrate. Such heteroatom organic compounds include compounds having formula:

R¹—X—R²

[0032] where X is —S(O)_(n)—, —S(O)_(n)—S(O)_(p)—, —S(O)_(n)—S(O)_(p)—S(O)_(q)—, —S(O)_(n)—S(O)_(p)—S(O)_(q)—S(O)_(u)—, —S(O)_(n)—S(O)_(p)—S(O)_(q)—S(O)_(u)—S(O)_(v)—, —S(O)_(n)—S(O)_(p)—S(O)_(q)—S(O)_(u)—S(O)_(v)—S(O)_(w)—, —(S(O)_(z))_(m)—(CH₂)_(y)—(S(O)_(z))_(m)— or —SO₂—S—(CH₂)_(y)—S—SO₂—, where n, p, q, u, v, w, z and z′ are each independently an integer of from 0 to 2, and m and m′ are each independently an integer of from 1 to 6, preferably from 1 to 4, and y is an integer of from 2 to 4; R¹ and R² are each independently halogen; —OH; (C₁-C₂₀) linear, branched, or cyclic alkyl; (C₂-C₂₀) linear, branched, or cyclic alkenyl; (C₂-C₂₀) linear, or branched alkynyl; or (C₁-C₂₀) alkyl-O(C₂-C₃O)₁R⁵, (C₁-C₁₂) alkylphenyl-O(C₂-C₃O)₁R⁵, or phenyl-O(C₂-C₃O)₁R⁵, where t is an integer of from 1-500 and R⁵ is hydrogen, (C₁-C₄) alkyl or phenyl; the alkyl, alkenyl or alkynyl are unsubstituted or substituted; or

[0033] X is a heteroatom selected from S, O, N, or N substituted with (C₁-C₆) linear or branched alkyl or a tosyl group, and R¹ and R² may be taken together along with the atoms to which they are attached to form a 5 to 18 membered heterocyclic ring, the heterocyclic ring optionally may contain one or more carbonyls; the heterocyclic ring may be saturated or unsaturated, unsubstituted or substituted on one or more atoms of the ring with a carboxylic acid group, —OH, C₁-C₆ alkyl, hydroxy (C₁-C₆) alkyl, or carboxy (C₁-C₆) alkyl.

[0034] The substituted alkyl, alkenyl and alkynyl groups of R¹ and R² may have substituents which include, but are not limited to, halogen, aryl, silyl, —SH, —CN, —SCN, —C═NS, —Si(OH)₃, silane; NO₂, —P(R)₂, —OH, —COOH, —CO(C₁-C₁₂) alkyl, —COO(C₁-C₁₂) alkyl, or NR³R⁴, where R is hydrogen or halogen, and R³ and R⁴ are each independently hydrogen, halogen, aryl, or (C₁-C₁₂) linear or branched alkyl. When more than two sulfur atoms are in a chain, additional substituent groups may include —SO₃M or —PO₃M, where M is hydrogen, or an alkali metal. Alkali metals include Li, Na, K, Rb, and Cs. Halogens include fluorine, chlorine, bromine and iodine. The cyclic alkenyl encompasses aryl groups. Aryl groups include, but are not limited to, phenyl, naphthyl, anthryl, phenanthryl, furanyl, pyridinyl, pyrmidinyl and the like. Preferably, aryl is phenyl or naphthyl.

[0035] Preferably, X is —S(O)_(n)—, —S(O)_(n)—S(O)_(p)—, —S(O)_(n)—S(O)_(p)—S(O)_(q), —S(O)_(n)—S(O)_(p)—S(O)_(q)—S(O)_(u)—, —SO₂—S—(CH₂)_(y)—S—SO₂—, or —(S(O)_(z))_(m)—(CH₂)_(y)—(S(O)_(z′))_(m′)—, where n, p, q, u, z, z′, m, and m′ are defined as above. More preferably X is a structure where n, p, q, and u are integers of 0 or 1, and most preferably n, p, q, and u are 0. In other words, sulfide, i.e., —S—, is preferred over sulfoxide, i.e., ═SO, which is preferred over sulfonyl, i.e., —SO₂— for preventing additive consumption in metal plating baths.

[0036] Also preferred is where X is a S, O, N or substituted N where R¹ and R² are taken together along with the atoms to which they are attached to form a 5 to 18 membered heterocyclic ring as defined above. Preferred substituent groups of the alkyl, alkenyl and alkynyl of R¹ and R² are halogen, aryl, silane, silyl, —SH, —CN, —SCN, —C═NS, —Si(OH)₃, —NO₂, —PO₃M, —P(R)₂, —COOH, CO(C₁-C₁₂) alkyl, —COO(C₁-C₁₂) alkyl, or NR³R⁴, where M, R, R³ and R⁴ are defined as above. Additive consumption inhibiting compounds of the present invention also may be employed as their alkali metal and alkaline earth metal salts.

[0037] Examples of such compounds as covered by the formula above include, but are not limited to, methyl sulfoxide, methyl sulfone, tetramethylene sulfoxide, thioglycolic acid, 2 (5H) thiophenone, 1,4-dithiane, trans-1,2-dithiane, 4,5-diol, tetrahydrothiophen-3-one, 3-thiophenemethanol, 1,3,5-trithiane, 3-thiophenacetic acid, thiotetronic acid, thioctic acid, crown ethers, crown thioethers, tetrapyrids, ethane thiosulfonate, (2-sulfonatoethyl) methane sulfonate, carboxyethylmethane thiosulfonate, 2-hydroxyethylmethane thiosulfate, 1,4-butanediyl bismethane thiosulfonate, 1,2-ethanediyl bismethane thiosulfonate, 1,3-propanediyl methane thiosulfonate, (3-sulfonatopropyl) methane thiosulfonate, propylmethane thiosulfonate, p-tolyldisulfoxide, p-tolyldisulfone, bis(phenylsulfonyl) sulfide, isopropyl sulfonyl chloride, 4-(chlorosulfonyl) benzoic acid, dipropyltrisulfide, dimethyltrisulfide, dimethyltetrasulfide, bis(3-triethoxysilyl) propyltetrasulfide, phenyl vinyl sulfone, 4-hydroxy-benzene sulfonic acid, and the like.

[0038] Examples of suitable crown ethers include, but are not limited to, 12-crown-4 (1,4,7,10-tetraoxacyclododecane), 15-crown-5 (1,4,7,13-pentaoxacyclopentadecane), 18-crown-6 (1,4,7,10,13,16-hexacyclooctadecane), (+)-(18-crown-6)-2,3,11,12-tetracarboxylic acid. Examples of suitable tetrapyrids include, but are not limited to, 1,5,9,13-tetrathiacyclohexadecane, 1,5,9,13-tetrathiacyclo-hexadecane-3,11-diol, and 1,4,7,10-tetrathiacyclodecane.

[0039] Examples of suitable heterocyclic nitrogen compounds include, but are not limited to, 1,4,7,10,13,16-hexamethyl-1,4,7,10,13,16-hexaazacyclooctadecane, 1,4,7,10-tetra-p-tosyl-1,4,7,10-tetraazacyclododecane, and 1,4,10,13-tetraoxa-7,16-diazacyclooctadecane.

[0040] Examples of preferred compounds of the above formula include methyl sulfoxide, methyl sulfone and 1,5,9,13-tetrathiacyclohexadecane.

[0041] The foregoing additive consumption inhibiting compounds of the present invention can be obtained commercially or prepared by synthetic methods known in the art.

[0042] The foregoing compounds may be employed in metal plating baths for plating copper, gold, silver, palladium, platinum, cobalt, chromium, cadmium, bismuth, indium, tin, rhodium, ruthenium, iridium, zinc, and alloys thereof. Preferably, the foregoing compounds of the present invention are employed in metal plating baths for plating copper, gold, platinum, palladium, silver, ruthenium, iridium and cobalt. More preferably, the foregoing additive consumption inhibiting compounds are employed in baths for copper, ruthenium, or iridium plating. Copper is the most preferred metal for plating within the scope of the present invention.

[0043] Adding one or more of the compounds of foregoing formula to metal plating baths inhibit the degradation of additives in the metal plating baths. Preferably, the metal plating baths are electroplating baths. The additive consumption inhibiting compounds are added in amounts of generally from about 0.001 g/L to about 100 g/L of bath. Preferably, the compounds are generally employed in plating baths of from about 0.01 g/L to about 20.0 g/L.

[0044] The additive consumption inhibiting compounds may be added to plating baths by any suitable method employed to add components to a bath. One method is to mix the additive consumption inhibiting compounds into the plating bath with the bath components and additives.

[0045] Additives that the compounds of the foregoing formula inhibit degradation of include, but are not limited to, brighteners, levelers, hardeners, wetting agents, malleability, ductility and deposition modifiers, suppressors and the like. Such additives are predominantly organic compounds. The additive consumption inhibiting compounds of the present invention are especially effective in preventing consumption of brighteners and levelers. The term “additive” within the scope of the present invention includes any suitable plating bath component except the additive consumption inhibiting compounds.

[0046] While not being bound to any particular theory, the heteroatom additive consumption inhibiting compounds of the present invention are believed to inhibit the consumption of additives by one or a combination of the following mechanisms. Many additives break down or decompose at the anode to oxidation products. The heteroatom additive consumption inhibiting compounds may competitively adsorb onto an anode over the additives, and become oxidized in place of the additives. Many metal plating baths contain chloride. Chloride is often added to metal plating baths in the form of HCl. Chloride is oxidized at the anode to chlorine. Chlorine may then oxidize the bath additives reducing the effectiveness of the additives in the metal plating bath. By adding one or more of the heteroatom compounds of the present invention to the metal plating bath, chlorine oxidizes the one or more heteroatom compounds over the additives. In other words, the heteroatom compounds perform as sacrificial species. In another mechanism, the additive consumption inhibiting heteroatom compounds of the present invention may compete with chloride, or with both chloride and the additives at the surface of the anode. Thus, the heteroatom compounds of the present invention are oxidized at the anode over the chloride, or both the chloride and the additives.

[0047] Examples of suitable brighteners employed in plating baths of the present invention, include but are not limited to, compounds that contain structural formulas: HO₃S—R¹¹—SH, HO₃S—R¹¹—S—S—R¹¹—SO₃H, where R¹¹ is C₁-C₆ or an aryl group, and HO₃S—Ar—S—S—Ar—SO₃H, where Ar is phenyl or naphthyl. Substituents of the alkyl and aryl groups may be, for example, alkyl, halo and alkoxy. Examples of such brightening agents are 3-mercapto-propylsulfonic acid (sodium salt), 2-mercapto-ethanesulfonic acid (sodium salt), and bissulfopropyl disulfide (BSDS). Such compounds are disclosed in U.S. Pat. Nos. 3,770,598, 4,374,709, 4,376,685, 4,555,315 and 4,673,469, all incorporated herein in their entirety by reference. Such polysulfides also may be employed to increase ductility of deposited metal. Other suitable brighteners, especially for copper baths, include N,N-dimethyldithiocarbamic acid (3-sulfopropyl) ester, sodium salt (DPS), (O-ethyldithiocarbonato)-S-(3-sulfopropyl)-ester, potassium salt (OPX), 3-[(amino-iminomethyl)-thio]-1-propanesulfonic acid (UPS), 3-(2-benzthiazolylthio)-1-propanesulfonic acid, sodium salt (ZPS), and the thiol of bissulfopropyl disulfide (MPS).

[0048] Examples of levelers that may be employed in a plating bath include, but are not limited to, alkylated polyalkyleneimines and organic sulfo sulfonates. Examples of such compounds include 1-(2-hydroxyethyl)-2-imidazolidinethione (HIT), 4-mercaptopyridine, 2-mercaptothiazoline, ethylene thiourea, thiourea and alkylated polyalkyleneimine. Such compounds are disclosed in U.S. Pat. Nos. 4,376,685, 4,555,315, and 3,770,598, the disclosures of which are hereby incorporated herein in their entireties by reference.

[0049] Examples of other additives that may function as brighteners in plating baths within the scope of the present invention include, but are not limited to, sulfur compounds such as 3-(benzthiazoyl-2-thio)-propylsulfonic acid sodium salt, 3-mercaptopropane-1-sulfonic acid sodium salt, ethylenedithiodipropylsulfonic acid sodium salt, bis-(p-sulfophenyl)-disulfide disodium salt, bis-(ω-sulfobutyl)-disulfide disodium salt, bis-(ω-sulfohydroxypropyl)-disulfide disodium salt, bis-(ω-sulfopropyl)-disulfide disodium salt, bis-(ω-sulfopropyl)-sulfide disodium salt, methyl-(ω-sulfopropyl)-disulfide sodium salt, methyl-(ω-sulfopropyl)-trisulfide disodium salt, O-ethyl-dithiocarbonic acid-S-(ω-sulfopropyl)-ester, potassium salt thioglycoli acid, thiophosphoric acid-O-ethyl-bis-(ω-sulfpropyl)-ester disodium salt, thiophosphoric acid-tris(ω-sulfopropyl)-ester trisodium salt, and the like.

[0050] Examples of oxygen containing high molecular weight compounds that may be employed as suppressors include carboxymethylcellulose, nonylphenolpolyglycol ether, octandiolbis-(polyalkylene glycolether), octanolpolyalkylene glycolether, oleic acidpolyglycol ester, polyethylenepropylene glycol, polyethylene glycol, polyethylene glycoldimethylether, polyoxypropylene glycol, polypropylene glycol, polyvinylalcohol, stearic acidpolyglycol ester, stearyl alcoholpolyglycol ether, and the like.

[0051] Aromatic and aliphatic quaternary amines also may be added to plating baths to improve deposit brightness. Dyes of the phenazine class (Safranine type) and phenazine azo dyes (Janus Green B type) may be employed as levelers. Polyethers are used to improve thickness and uniformity of metal plating.

[0052] Brighteners and levelers are added to plating baths in amounts of from about 1 part per billion to about 1.0 g/L of bath. More often, brighteners and levelers range from about 10 parts per billion to about 500 parts per million. Ranges for bath components may vary from one bath composition to the next. Thus, the foregoing weight ranges for the organic additives are general ranges.

[0053] Examples of suitable wetting agents or surfactants that may be employed in plating baths of the present invention include nonionic surfactants such as alkyl phenoxy polyethoxyethanols. Other suitable wetting agents containing multiple oxyethylene groups also may be employed. Such wetting agents include compounds of polyoxyethylene polymers having from as many as 20 to 150 repeating units. Such compounds also may perform as suppressors. Also included in the class of polymers are block copolymers of polyoxyethylene and polyoxypropylene. Surfactants and wetting agents are added in conventional amounts.

[0054] In addition to the additives, other plating bath components are included in plating baths as a source of metal ions, pH adjusters, such as inorganic acids, and a source of halide ions. Generally, plating baths are aqueous. The pH range of the baths may range from 0 to about 14, preferably from 0 to about 8. Wetting agents employed in plating baths and amounts employed in such baths are well known in the art. Inorganic acids employed include, but are not limited to, sulfuric acid, hydrochloric acid, nitric acid, phosphoric acid and the like. Sulfuric acid is a preferred acid. Halogen ions are optional. Halogen ions employed in plating baths preferably include chloride, fluoride, and bromide. Such halides are added into the bath as a water soluble salt. Chloride is preferred, and is introduced into the bath, preferably, as sodium chloride. Water soluble salts of metals provide a source of the metal to be plated on a substrate. Such water soluble salts include metal salts of copper, chromium, gold, silver, cadmium, platinum, palladium, cobalt, bismuth, indium, tin, rhodium, ruthenium, iridium, and zinc. Solder also may be plated with the plating baths of the present invention. Such solders are alloys of the metal disclosed herein.

[0055] Copper is the most preferred metal to be plated with the baths of the present invention. Preferably, the copper is electroplated. Copper that is useful may be in the form of any solution soluble copper compound. Suitable copper compounds include, but are not limited to, copper halides, copper sulfates, copper alkane sulfonate, copper alkanol sulfonate, and the like. When copper halide is used, chloride is the preferred halide. Preferred copper compounds are copper sulfate, copper alkane sulfonate, or mixtures thereof. The more preferred are copper sulfate, copper methane sulfonate or mixtures thereof. Copper compounds useful in the present invention are generally commercially available or may be prepared by methods known in the literature. In copper baths, copper composes at least over 50% by weight of metal in the bath. Preferably, copper composes from about 60% to about 90% by weight of metal in the bath. When copper is plated on a substrate the pH of the bath may range from 0 to about 14.0. Preferably the bath ranges from a pH of from 0 to about 8.0.

[0056] Metal ions range in concentration in the plating baths of from about 0.010 g/L to about 200 g/L, preferably from about 0.5 g/L to about 100 g/L. When copper is employed the amount of copper may range from about 0.01 to about 100 g/L. Preferably, copper ranges from about 0.1 g/L to about 50 g/L. When the bath of the present invention is used in a non-high speed plating process, the amount of copper present in the bath ranges from about 0.02 g/L to about 25 g/L. When the bath of the present invention is used in a high speed plating process, the amount of copper present in the bath ranges from about 1.0 g/L to about 100 g/L, preferably from about 2.0 g/L to about 50 g/L.

[0057] Halide ions range in concentration of from 0 mg/L to about 1.0 g/L, preferably from about 1.0 mg/L to about 150 mg/L. Acids are added to the plating baths to obtain a pH range of from about 0 to about 8.0. Accordingly, acids are added in amounts of from about 10 g/L to about 600 g/L, preferably from about 15 g/L to about 500 g/L.

[0058] An example of an acid copper electroplating bath for practicing the present invention has a composition as follows: Copper Ions (as Copper Sulfate) 0.01 to 50 g/L Sulfuric Acid (Concentrated)  15 to 500 g/L Chloride Ions (as Sodium Chloride) 1 ppm to 150 ppm Additives As Required Additive Preserving Compound  0.1 to 10 g/L Water To 1 liter

[0059] While the heteroatom organic compounds may be employed to prevent degradation of additives in any suitable plating bath where a substrate is to be metal plated, preferably, the additive preserving compounds are employed in electroplating baths. Such electroplating baths are employed in electrodeposition of a metal on a substrate such as in the manufacture of printed wiring boards and silicon wafers used in microchip applications, and in the manufacture of other components for electrical devices. Electroplating processes involve passing current through an anode, an electroplating solution, and a cathode for a sufficient amount of time to metal plate a substrate to a desired thickness. The anode may be a soluble anode (composed of a metal such as copper that dissolves and replenishes the electroplating bath as plating occurs). Alternatively, an insoluble anode (composed of an inert material such as platinum, platinized titanium, lead, and the like) may be employed. Preferably, the present invention is employed in plating processes employing an insoluble anode where electroplating rates are greater and problems associated with additive consumption (often oxidation at the anode) are greater than with processes employing soluble anodes.

[0060] Examples of useful insoluble anodes are anodes that have surfaces with oxides of iridium and tantalum. Such anodes have from about 20 to about 90 moles percent of iridium with the remainder tantalum. Preferred is about 60 to about 90 mole percent of iridium with the remainder tantalum. The anodes are made by coating iridium and tantalum on a conducting substrate such as a titanium substrate.

[0061] Other suitable anodes include anodes composed of at least about 10 mole percent of group VIII metals, at least about 10 mole percent valve metal and at least about 5 mole percent binder metal. Group VIII metals include cobalt, nickel, ruthenium, rhodium, palladium, iridium and platinum. Valve metals include titanium, zirconium, hafnium, vanadium, niobium and tantalum. Binder metals include beryllium, calcium, strontium, barium, scandium, yttrium, lanthanum and rare earth elements with atomic numbers 58 through 71. Especially useful is an oxide composition with from about 5 to about 20 mole percent of barium, and the ratio of iridium to tantalum between about ¼ and about 4. Such a composition is about 5 mole percent barium, from about 30 to about 40 mole percent iridium with the remainder tantalum. Additionally, osmium, silver and gold or their oxides may be employed in insoluble anodes.

[0062] As mentioned above, plating baths of the present invention may be employed in any suitable plating process where metal is plated on a substrate. Plating baths of the present invention are especially suitable for plating substrates in the manufacture of electronic devices such as in the printed wiring board industry and the manufacture of silicon wafers in microprocessing.

[0063] In an electroplating process, the substrate to be plated is used as a cathode. A soluble or preferably an insoluble anode, as described above, is employed as a second electrode. A process of pulse plating, or DC (direct current), or a combination of pulse plating and DC is employed. Such plating methods are known in the art. Current densities and electrode surface potentials may vary depending on the specific substrate to be plated. Generally, anode and cathode current densities may vary within a range of from about 1 to about 1000 amps/ft² (ASF). Plating baths are maintained in a temperature range of from about 20° C. to about 110° C. Specific ranges vary depending upon which metal is being plated. Such temperature ranges are well known in the art. Copper baths may range in temperature from about 20° C. to about 80° C. Acid copper baths range in temperature of from about 20° C. to about 50° C. Plating is continued for a time sufficient to form a deposit of desired thickness. Generally, plating time for a circuit board is from about 45 minutes to about 8 hours. For circuit board manufacture, a desired thickness may range from about 0.5 to about 3.0 mils. More often layer thickness ranges from about 1.0 to about 1.5 mils.

[0064] Both vertical and horizontal plating processes may be employed. In the vertical process, the substrate, such as a printed circuit or wiring board, is sunk in a vertical position into a container containing a plating bath solution of the present invention. The substrate, which functions as a cathode, is situated in the vertical position opposite at least one anode, preferably an insoluble anode. The substrate and the anode are connected to a current source. Instead of regulating the current with the current source, there also can be a voltage arrangement where the voltage between the substrate and the anode is regulated. Plating solution is directed continuously through the container by means of transporting equipment such as a pump.

[0065] An example of an arrangement that is suitable for treating a substrate or workpiece by a vertical method and apparatus is represented in FIG. 1. Apparatus 10 is composed of container 12 with metal plating bath 14 that contains an additive consumption inhibiting heteroatom compound. The metal plating bath 14 may be used, for example, for copper plating and contains previously mentioned components and additives.

[0066] Workpiece 16 (cathode), for example a circuit board, and anodes 18, for example insoluble titanium anodes coated with iridium dioxide, are immersed into metal plating bath 14. Workpiece 16 and anodes 18 are connected electrically to current source 20. Instead of regulating the current with the current source, a voltage arrangement (not shown) may be used to regulate voltage between workpiece 16 and anodes 18. Metal plating bath 14 is directed continuously to second container or reservoir 22 by a transporting means (not shown) such as a pump. Reservoir 22, which metal plating bath 14 flows through, replenishes metal bath components and additives in metal plating bath 14 such as copper salts, brighteners, levelers, additive consumption inhibiting compounds and the like.

[0067] In the horizontal plating process, the substrate is transported through a conveyorized unit in a horizontal position with a horizontal direction of movement. Plating bath is injected continuously from below and/or from above onto the substrate by means of splash nozzles or flood pipes. The anodes are arranged at a spacing relative to the substrate and are brought into contact with the plating bath by means of a suitable device. The substrate is transported by means of rollers or plates.

[0068] An example of a horizontal method and apparatus that may be employed to practice the present invention is illustrated in FIG. 2. Spray chamber 24 of apparatus 46 is formed with slots 26 at either end to allow for continuous conveyance of panel 28, such as a circuit board panel to be metal plated, to enter and leave chamber 24. While a circuit board is illustrated, any suitable surface that may be plated by a horizontal apparatus lies within the scope of the present invention. Panel 28 is supported for moving in the direction of the arrow by idler rollers 30. A series of roller brushes 32 is positioned to contact both upper and lower surfaces of panel 28 with a series of anodes 34 positioned to contact roller brushes 32 on the sides of idler rollers 30 away from panel 28. Anodes 34 are formed of any suitable metal such as titanium coated with iridium dioxide. While any suitable anode may be employed, an insoluble anode such as the titanium coated iridium dioxide anode is preferred. Anodes 34 are positioned such that the anodes touch the upper set of idler rollers 30 from above, and touch the lower set of idler rollers 30 from below. Anodes 34 are electrically connected in parallel to a positive terminal of power supply 36. A negative terminal of power supply 36 is connected to panel 28 (cathode) that is to be plated. Spray jets 38 which are connected to reservoir 42 containing metal plating bath 40 by means of lines 44 are arranged to spray metal plating bath 40 down on both anodes 34 and roller brushes 32 as well as panel 28 between roller brushes 32. Arrows show the path for the metal bath flow through lines 44. Metal plating bath 40 is pumped from reservoir 42 through lines 44 by a pumping means (not shown) in mechanical connection to reservoir 42. The transport mechanism means (not shown) for panel 28 is a conveyor-type mechanism that provides for a continuous movement of panel 28 through chamber 24 while maintaining electrical contact between the negative pole or power supply 36 and panel 28.

[0069] By preventing or substantially reducing the amount of additive breakdown, the additive consumption inhibiting compounds provide for improved brightness of plated metal and improved physical-mechanical properties of the plated metal. Metal layers plated with baths of the present invention are not brittle or powdery in structure. Also, metal layers plated with the baths of the present invention have good throwing power and no appreciable plating folds. Such properties for metal layers are especially desirable for through-holes in printed circuit and wiring boards. Additionally, because the additive consumption inhibiting compounds prevent or substantially reduce the amount of additives degraded during metal plating, replenishment of the organic additives is rarely, if ever, needed. Also, prevention of additive breakdown permits metal plating operations to continue for longer periods without bath replacement. Further, because the select compounds prevent degradation of additives, costly semi-permeable membranes can be eliminated from apparatus during plating. Thus, plating baths containing the additive consumption inhibiting compounds provide for a more efficient and economic method for metal plating than baths without the additive consumption inhibiting compounds. Accordingly, metal plating baths of the present invention provide for an improved metal plating process. All numerical ranges disclosed above are inclusive and combinable.

[0070] While the present invention is described with an emphasis on electroplating processes in the printed wiring board industry, the present invention may be employed in any suitable plating process. The compounds may be employed in metal plating baths in the manufacture of electrical devices such as printed circuit and wiring boards, integrated circuits, electrical contact surfaces and connectors, electrolytic foil, silicon wafers for microchip applications, semi-conductors and semi-conductor packaging, lead frames, optoelectronics and optoelectronic packaging, solder bumps such as on wafers, and the like. Additionally, the metal plating baths may be employed for metal plating decorative articles for jewelry, furniture fittings, automobile parts, sanitary appliances, and the like. Further, the metal plating baths may be employed in waste treatment methods.

[0071] All numerical ranges in the present application are inclusive and combinable. The following examples are provided to better describe the present invention, and are not intended to limit the scope to the present invention.

EXAMPLE 1

[0072] Compounds within the scope of the present invention were tested for their ability to prevent brightener consumption in a copper plating bath. Hydrodynamically controlled Hull Cells were used to measure the ability of a compound to prevent brightener consumption. A compound's ability to prevent brightener consumption was measured by the recording of the number of fully bright cathodes produced in the about 5-90 ASF current density range without replenishing the brightener.

[0073] The copper plating bath employed in the tests was as follows: Bath Component Amount Copper Sulfate Pentahydrate  80 g/L Sulfuric Acid (Concentrated) 225 g/L Chloride (as sodium chloride) 50 ppm Polyethylene Oxide (suppressor)  1 g/L Bissulfopropyl Disulfide (brightener)  1 ppm Water To 1 L

[0074] Compounds tested are disclosed in the table below along with the results. Each compound was added to the plating bath in the amount of about 0.1 g/L. A control bath with no brightener protecting additives was also tested. Each Hull Cell experiment was performed with copper clad FR4/glass-epoxy panels functioning as the cathode, and an iridium dioxide coated titanium mesh functioning as the anode. The cathode was electroplated at about 3 amps for about 10 minutes with a DC rectifier and air agitation. After about 10 minutes, if the cathode deposit was bright in the about 5-90 ASF current density range, a new copper cathode was immersed and electroplated. The process was repeated until the cathode deposit was matte (dull and non-reflective) in the about 5-90 ASF current density range. About 7 grams of copper sulfate heptahydrate was added about every 30 minutes to each plating bath to replenish copper ions. When a matte deposit for a panel was recorded, this meant that the brightener in the bath was depleted.

[0075] The copper plating bath without the addition of a compound to prevent brightener consumption (control) did not produce a single bright Hull Cell without brightener replenishment. The number of bright Hull Cells that each brightener preserving compound produced is disclosed in the table below. Compound Number of Bright Hull Cells Methyl Sulfoxide 5 3-(2-thienyl)acrylic acid 3 1,4-dithiane 3 Control (no compound added) Less than 1

[0076] Best results were obtained with methyl sulfoxide. All the compounds tested showed some brightener preservation in contrast with the control that was composed of only the copper bath components. Thus, the compounds listed above can be added to a copper plating bath to inhibit brightener consumption.

EXAMPLE 2

[0077] Compounds within the scope of the present invention were tested for their ability to prevent brightener consumption in a copper plating bath. Hydrodynamically controlled Hull Cells were used to measure the ability of a compound to prevent brightener consumption. A compound's ability to prevent brightener consumption was measured by the recording of the number of fully bright cathodes produced in the about 5-90 ASF current range without replenishing the brightener.

[0078] The copper plating bath employed in the tests was as follows: Bath Component Amount Copper Sulfate Pentahydrate  80 g/L Sulfuric Acid (Concentrated) 225 g/L Chloride (as sodium chloride) 50 ppm Polyethylene Oxide (suppressor)  1 g/L Bissulfopropyl Disulfide (brightener)  1 ppm Water To 1 L

[0079] Compounds tested are disclosed in the table below along with the results. Each compound was added to the plating bath in the amount of about 1 g/L. A control bath with no brightener protecting additives was also tested. Each Hull Cell experiment was performed with copper clad FR4/glass-epoxy panels functioning as the cathode, and an iridium dioxide coated titanium mesh functioning as the anode. The cathode was electroplated at about 3 amps for about 10 minutes with a DC rectifier and air agitation. After about 10 minutes, if the cathode deposit was bright in the about 5-90 ASF current density range, a new copper cathode was immersed and electroplated. The process was repeated until the cathode deposit was matte in the about 5-90 ASF current density range, up to a total of about thirty minutes of plating time, i.e., three consecutive bright Hull Cell panels. When a matte for a panel was recorded, this meant that the brightener in the bath was depleted.

[0080] The copper plating bath without the addition of a compound to prevent brightener consumption (control) did not produce a single bright Hull Cell without brightener replenishment. The number of bright Hull Cells that each brightener preserving compound produced is disclosed in the table below. Compound Number of Bright Hull Cells 2 (5) thiophenone 3 Thiodiglycolic acid 3 Methyl sulfone 3 1,4-dithiaspiro[4,5]decan-8-ol 3 Methyl sulfoxide 3 Tetramethylene sulfoxide 3 1,5,9,13-tetrathiacyclohexadecane 3 Trans-1,2-dithiane,4,5-diol 3 Tetrahydrothiophen-3-one 2 Control (no compound added) Less than 1

[0081] All the compounds tested showed some brightener preservation in contrast with the control that was composed of only the copper bath components. Thus, the compounds listed above can be added to a copper plating bath to inhibit brightener consumption.

EXAMPLE 3

[0082] The following comparative tests showed that the additive protecting compounds are an improvement over the use of iron redox methods for inhibiting brightener compositions.

[0083] Two metal plating baths were prepared both composed of about 80 g/L of copper sulfate pentahydrate, about 225 g/L of sulfuric acid, about 1 g/L of polyethylene oxide and about 1 ppm of bissulfopropyl disulfide (brightener). One bath contained a compound that prevents brightener consumption. The compound that was added to the bath was 1,5,9,13-tetrathiacyclohexadecane-3,11′-diol and it was added in an amount of about 0.1 g/L. The second bath was a control and did not contain any additional components.

[0084] Each bath was used to plate copper on a copper clad FR4/glass-epoxy panel in a standard Hull Cell. An iridium oxide mesh-type anode was employed as the anode, and the copper clad was employed as the cathode. Using a DC rectifier, 3 amps of current were passed through the Hull Cell for about 10 minutes, at which point the cathode was removed and replaced with a new copper clad panel. The control bath produced a matte panel after about the first 10 minutes of plating. The bath containing the 1,5,9,13-tetrathiacyclohexadecane-3,11-diol produced more than 15 bright panels. The brightener consumption inhibiting compound decreased brightener consumption by more than a factor of 15, thus improving the copper plating process.

EXAMPLE 4

[0085] The following comparative tests showed that the additive consumption inhibiting compounds of the present invention are an improvement over iron redox methods for inhibiting brightener consumption.

[0086] Four metal plating baths were prepared all composed of about 80 g/L of copper sulfate pentahydrate, about 225 g/L of sulfuric acid, about 1 g/L of polyeththylene oxide and about 1 ppm of bissulfopropyl disulfide (brightener). Iron (II) sulfate heptahydrate was added to three of the four baths in different quantities. One bath contained iron (II) sulfate heptahydrate in an amount of about 1 g/L, the second bath contained about 10 g/L of iron (II) sulfate heptahydrate and the third bath contained about 200 g/L of iron (II) sulfate heptahydrate. The iron (II) sulfate heptahydrate was added to each of the baths to test the iron (II) sulfate heptahydrate's ability to prevent brightener consumption during plating copper onto copper clad FR4/glass-epoxy panels in a standard Hull Cell. The fourth bath was a control bath without iron. The Hull Cell contained an iridium dioxide (IrO₂) mesh-type insoluble anode. The copper clad FR4/glass-epoxy panels functioned as cathodes. Each Hull Cell was operated at about 3A for about 10 minutes. The cathode current density was about 5-90 ASF.

[0087] After about 10 minutes of electroplating in the presence of varying degrees of iron (II) sulfate, no fully bright panels were produced with a current density of about 5-90 ASF. Thus, significant amounts of brightener were consumed during plating. However, a slight improvement in protecting brightener was noted when the current density was in the about 0-12 ASF range. Semi-bright panels were produced. The control panel had a semi-bright surface when the current density was reduced to about 0-6 ASF range.

[0088] The additive consumption inhibiting compounds of the present invention of Examples 1, 2 and 3 above showed improved brightener protection in contrast to iron salts at a current density of about 5-90 ASF. The additive consumption inhibiting compounds of the present invention provided several fully bright cathode deposits in contrast to the iron (II) sulfate.

EXAMPLE 5

[0089] Other transition metals in addition to iron were tested for their ability to prevent brightener consumption in acid copper plating baths.

[0090] Five baths were prepared with about 80 g/L of copper sulfate pentahydrate, about 225 g/L of sulfuric acid, about 1 g/L of polyethylene oxide and about 1 ppm of bissulfopropyl disulfide (brightener). One bath contained about 1 g/L of Na₂MoO₄, a second bath contained about 10 g/L of MnSO₄, a third bath contained about 1 g/L of MnSO₄ and a fourth bath contained about 1 g/L of TeO₂. A fifth bath contained no additives and served as a control. Brightener consumption was tested in Hull Cells employing copper clad FR4/glass-epoxy panels as the cathode and an IrO₂ coated titanium anode. Electroplating was performed for about 10 minutes at 3 amps using a DC rectifier with air agitation. Current density was in the range of about 5-90 ASF.

[0091] Although the baths containing the transition metal elements produced panels that were semi-bright, in contrast to the control, none of the baths produced fully bright cathodes in the about 5-90 ASF current density range. Just as with the iron (II) sulfate of example 4, the baths containing the transition metal salts provided copper deposits that were slightly brighter than the control.

[0092] The additives consumption inhibiting compounds of the present invention as shown in Examples 1, 2 and 3 above had improved brightner preservation activity in contrast to transition metal salts. 

What is claimed is:
 1. A metal plating bath comprising metal salts and an additive consumption inhibiting compound having a formula: R¹—X—R² where X is —S(O)_(n)—, —S(O)_(n)—S(O)_(p)—, —S(O)_(n)—S(O)_(p)—S(O)_(q)—, —S(O)_(n)—S(O)_(p)—S(O)_(q)—S(O)_(u)—, S(O)_(n)—S(O)_(p)—S(O)_(q)—S(O)_(u)—S(O)_(v)—, —S(O)_(n)—S(O)_(p)—S(O)_(q)—S(O)_(u)—S(O)_(v)—S(O)_(w)—, —(S(O)_(z))_(m)—(CH₂)_(y)—(S(O)_(z′))_(m′)—, or —SO₂—S—(CH₂)_(y)—S—SO₂—, where n, p, q, u, v, w, z and z′ are each independently an integer from 0 to 2, and m and m′ are independently an integer from 1 to 6 and y is an integer of from 2 to 4; R¹ and R² are each independently halogen; —OH; (C₁-C₂₀) linear, branched, or cyclic alkyl; (C₂-C₂₀) linear, branched, or cyclic alkenyl; or (C₂-C₂₀) linear, or branched alkynyl; or (C₁-C₂₀) alkyl-O(C₂-C₃O)₁R⁵, (C₁-C₁₂) alkyphenyl-O(C₂-C₃O)₁R⁵, or -phenyl-O(C₂-C₃O)₁R⁵, where t is an integer of from 1-500 and R⁵ is hydrogen, (C₁-C₄) alkyl or phenyl; the alkyl, alkenyl or alkynyl are unsubstituted, or substituted; or X is a heteroatom selected from S, O, N, or N substituted with (C₁-C₆) alkyl or a tosyl group, and R¹ and R² may be taken together along with the atoms to which they are attached to form a 5 to 18 membered heterocyclic ring that may be unsubstituted or substituted, saturated or unsaturated comprising 1 to 8 heteroatoms, the heterocyclic ring optionally containing one or more carbonyls; and the metal salts are salts of metals selected from the group consisting of copper, gold, silver, platinum, palladium, cobalt, chromium, cadmium, bismuth, indium, lead, tin, rhodium, iridium, ruthenium, zinc, and mixtures thereof.
 2. The metal plating bath of claim 1, wherein the alkyl, alkenyl, or alkynyl groups are substituted with one or more of halogen, aryl, silyl, —SH, —CN, —SCN, —C═NS, Si(OH)₃, —NO₂, P(R)₂, —OH, —COOH, —CO(C₁-C₁₂) alkyl, —COO(C₁-C₁₂) alkyl, silane, —NR³R⁴, —PO₃M, or —SO₃M with the proviso that when —SO₃M or —PO₃M is a substituent X contains more than two sulfur atoms in a chain, M is hydrogen, or an alkali metal, R is hydrogen or halogen, and R³ and R⁴ are independently hydrogen, halogen, aryl, or (C₁-C₁₂) linear or branched alkyl.
 3. The metal plating bath of claim 1, wherein the 5 to 18 membered heterocyclic ring is substituted on one or more carbons of the ring with —COOH, —OH, (C₁-C₆) alkyl, hydroxy (C₁-C₆) alkyl, or carboxyl (C₁-C₆) alkyl.
 4. The metal plating bath of claim 1, wherein the additive consumption inhibiting compound comprises methyl sulfoxide, methyl sulfone, tetramethylene sulfoxide, thioglycolic acid, 2 (5H) thiophenone, 1,4-dithiane, trans-1,2-dithiane, tetrahydrothiophene-3-one, 3-thiophenemethanol, 1,3,5-trithiane, 3-thiophenacetic acid, thiotetronic acid, crown ethers, crown thioethers, tetrapyrids, dipropyltrisulfide, bis(3-triethoxy silyl) propyl tetrasulfide, dimethyl tetrasulfide, methyl methanethiosulfate, carboxyethyl methane, p-tolyl disulfoxide, p-tolyldisulfone, bis(phenylsulfonyl)sulfide, 4(chlorosulfonyl) benzoic acid, thioctic acid, phenyl vinyl sulfone, 4-hydroxy-benzene sulfonic acid, isopropylsulfonyl chloride, 1-propanesulfonyl chloride, or mixtures thereof.
 5. The metal plating bath of claim 4, wherein the crown thioethers comprise 1,5,9,13-tetrathiacyclohexadecane, 1,5,9,13-tetrathiacyclo-hexadecane-3,11-diol, 1,4,7,10-tetrathiacyclodecane, or mixtures thereof.
 6. The metal plating bath of claim 4, wherein the crown ethers comprise 12-crown-4,15-crown-5, 18-crown-6, (+)-(18-crown-6)-2,3, 11,12-tetracarboxylic acid, or mixtures thereof.
 7. The metal plating bath of claim 1, wherein heterocyclic nitrogen compounds comprise 1,4,7,10,13,16-hexamethyl-1,4,7,13,16-hexaazacyclooctadecane, 1,4,7,10-tetra-p-tosyl-1,4,7,10-tetraazacyclododecane, 1,4,10,13-tetraoxa-7,16-diazacyclooctadecane, or mixtures thereof.
 8. The metal plating bath of claim 1, wherein the additive consumption inhibiting compound comprises from about 0.001 g/L to about 100 g/L of the bath.
 9. The metal plating bath of claim 1, further comprising additives comprising brighteners, levelers, hardeners, wetting agents, malleability modifiers, ductility modifiers, deposition modifiers, or suppressors.
 10. The metal plating bath of claim 9, wherein the brighteners comprise compounds having the formulas: HO₃S—R¹¹—SH; HO₃S—R¹¹—S—S—R¹¹—SO₃H, where R¹¹ is C₁-C₆ alky or an aryl group; or HOS₃—Ar—S—S—Ar—SO₃H, where Ar is phenyl or naphthyl, the alky and aryl groups may be unsubstituted or substituted with an alkyl group, halo or alkoxy group.
 11. The metal plating bath of claim 9, wherein the brighteners comprise 3-mercapto-propylsulfonic acid sodium salt, 2-mercapto-ethanesulfonic acid sodium salt, bissulfopropyl disulfide, or mixtures thereof.
 12. The metal plating bath of claim 9, wherein the brightener comprises 3-mercapto-propylsulfonic acid sodium salt, 2-mercapto-ethanesulfonic acid sodium salt, bissulfpropyl disulfide, N,N-dimethyldithiocarbamic acid (3-sulfopropyl) ester sodium salt, (O -ethyldithiocarbonato)-S-(3-sulfopropyl)-ester potassium salt, 3-[(amino-iminoethyl)-thio]-1-propanesulfonic acid, 3-(2-benzthiazolylthio)-1-propanesulfonic acid sodium salt or mixtures thereof.
 13. The plating bath of claim 9, wherein the levelers comprise alkylated polyalkyleneimines, organo sulfo sulfones, dyes of the phenazine class, phenazine azo dyes, or mixtures thereof.
 14. The plating bath of claim 9, wherein the brighteners comprise 3-(benzthiazoyl-2-thio)-propylsulfonic acid sodium salt, 3-mercaptopropane-1-sulfonic acid sodium salt, ethylenedithiodipropylsulfonic acid sodium salt, bis-(p-sulfopehnyl)-disulfide disodium salt, bis-(ω-sulfobutyl)-disulfide disodium salt, bis-(ω-sulfohydroxypropyl)-disulfide disodium salt, bis-(ω-sulfopropyl)-disulfide disodium salt, bis-(ω-sulfopropyl)-sulfide disodium salt, methyl-(ω-sulfopropyl) sodium salt, methyl-(ω-sulfopropyl)-trisulfide disodium salt, O-ethyl-dithiocarbonic acid-S-(ω-sulfopropyl)-ester, potassium salt thioglycolic acid, thiophosphoric acid-O-ethyl-bis-(ω-sulfopropyl)-ester disodium salt, thiophosphoric acid-tri(ω-sulfopropyl)-ester trisodium salt, or mixtures thereof.
 15. The plating bath of claim 9, wherein the suppressors comprise carboxymethylcellulose, nonyphenolpolyglycol ether, octandiolbis-(polyalkylene glycolether), octanolpolyalkylene glycolether, oleic acidpolyglycol ester, polyethylenepropylene glycol, polyethylene glycol, polyethylene glycoldimethylether, polyoxypropylene glycol, polypropylene glycol, polyvinylalcohol, stearic acidpolyglycol ester, stearyl alcoholpolyglycol ether, or mixtures thererof.
 16. The metal plating bath of claim 1, wherein the pH of the bath ranges from 0 to about 8.0.
 17. A copper metal plating bath comprising a copper salt, and an additive consumption inhibiting compound having a formula: R¹—X—R² where X is —S(O)_(n)—, —S(O)_(n)—S(O)_(P)—, —S(O)_(n)—S(O)_(p)—S(O)_(q)—, —S(O)_(n)—S(O)_(p)—S(O)_(q)—S(O)_(u)—, —S(O)_(n)—S(O)_(p)—S(O)_(q)—S(O)_(u)—S(O)_(v)—, —S(O)_(n)—S(O)_(p)—S(O)_(q)—S(O)_(u)—S(O)_(v)—S(O)_(w)—, —(S(O)_(z))_(m)—(CH₂)_(y)—(SO_(z′))_(m′)—, or —SO₂—S—(CH₂)_(y)—S—SO₂—, where n, p, q, u, v, w, z and z′ are each independently an integer from 0 to 2, and m and m′ are independently an integer from 1 to 6 and y is an integer of from 2 to 4; R¹ and R² are independently halogen, —OH, (C₁-C₂₀) linear, branched, or cyclic alkyl, (C₂-C₂₀) linear, branched, or cyclic alkenyl, (C₂-C₂₀) linear or branched alkynyl; or (C₁-C₂₀) alkyl-O(C₂-C₃O)₁R⁵, (C₁-C₁₂) alkylphenyl-O(C₂-C₃O)₁R⁵, or -phenyl-O(C₂-C₃O)₁R⁵, where t is an integer of from 1-500 and R⁵ is hydrogen, (C₁-C₄) alkyl or phenyl; the alkyl, alkenyl, and alkynyl groups are unsubstituted or substituted; or X is a heteroatom selected from S, O, N, or N substituted with (C₁-C₆) alkyl or a tosyl group, and R¹ and R² may be taken together along with the atoms to which they are attached to form a 5 to 18 membered heterocyclic ring, unsubstituted or substituted, saturated or unsaturated comprising 1 to 8 heteroatoms, the heterocyclic ring optionally contains one or more carbonyls.
 18. The copper metal plating bath of claim 17, wherein the alkyl, alkenyl, or alkynyl groups are substituted with one or more of halogen, aryl, silyl, —SH, —CN, —SCN, C═NS, Si(OH)₃, —NO₂, P(R)₂, —OH, —COOH, —CO(C₁-C₁₂) alkyl, —COO(C₁-C₁₂) alkyl, NR³R⁴, silane, —PO₃M or —SO₃M with the proviso that when —SO₃M or —PO₃M is a substituent X contains more than two sulfur atoms in a chain, M is hydrogen, or an alkali metal, R is hydrogen or halogen, and R³ and R⁴ are independently hydrogen, halogen, aryl or (C₁-C₁₂) linear or branched alkyl.
 19. The copper metal electroplating bath of claim 17, wherein the 5 to 18 membered heterocyclic ring is substituted on one or more carbons of the ring with —COOH, —OH, (C₁-C₆) alkyl, hydroxy (C₁-C₆) alkyl, or carboxyl (C₁-C₆) alkyl.
 20. The copper metal electroplating bath of claim 17, wherein the additive consumption inhibiting compound comprises methyl sulfoxide, methyl sulfone, tetramethylene sulfoxide, thioglycolic acid, 2 (5H) thiophenone, 1,4-dithiane, trans-1,2-dithiane, tetrahydrothiophene-3-one, 3-thiophenemethanol, 1,3,5-trithiane, 3-thiopheneacetic acid, thiotetronic acid, crown ethers, crown thioethers, tetrapyrids, dipropyltrisulfide, bis(3-triethoxy silyl propyltetrasulfide, dimethyl tetrasulfide, methyl methanethiosulfate, (2-sulfonatoethyl) methane, p-tolyldisulfoxide, p-tolyldisulfone, bis(phenylsulfonyl)sulfide, 4-(chlorosulfonyl) benzoic acid, isopropyl sulfonyl chloride, 1-propane sulfonyl chloride, thioctic acid, 4-hydroxy-benzene sulfonic acid, phenyl vinyl sulfone, or mixtures thereof.
 21. The copper metal electroplating bath of claim 20, wherein the crown ethers comprise 12-crown-4,15-crown-5, 18-crown-6, (+)-(18-crown-6)-2,3,11,12-tetracarboxylic acid, or mixtures thereof.
 22. The copper metal electroplating bath of claim 20, wherein the tetrapyrids comprise 1,5,9,13-tetrathiacyclohexadecane, 1,5,13-tetrathiacyclo-hexadecane-3,11-diol, 1,5,9,13-tetracyclohexadecane, or mixtures thereof.
 23. The copper metal electroplating bath of claim 17, wherein heterocyclic nitrogen compounds comprise 1,4,7,10,13,16-hexamethyl-1,4,7,10,13,16-hexaazacyclooctadecane, 1,4,7,10-tetra-p-tosyl-1,4,7,10-tetraazacyclododecane, 1,4,10,13-tetraoxa-7,16-diazacyclooctadecane, or mixtures thereof.
 24. The copper metal electroplating bath of claim 17, wherein the additive consumption inhibiting compounds comprise from about 0.001 g/L to about 100 g/L of the bath.
 25. The copper metal electroplating bath of claim 17, wherein the copper metal salts comprise copper halides, copper sulfate, copper alkane sulfonate, copper alkanol sulfonate, or mixtures thereof.
 26. The copper metal electroplating bath of claim 17, wherein the bath has a pH of from 0 to about 8.0.
 27. The copper metal plating bath of claim 17, further comprising additives comprising brighteners, levelers, hardeners, wetting agents, malleability modifiers, ductility modifiers, deposition modifiers, suppressors or mixtures thereof.
 28. The copper metal plating bath of claim 27, wherein the brighteners comprise compounds having the structural formula: HO₃S—R¹¹—SH; HO₃S—R¹¹—S—S—R¹¹—SO₃H, where R¹¹ is C₁-C₆ alkyl group or an aryl group; or HO₃S—Ar—S—S—Ar—SO₃H, where Ar is phenyl or naphthal; the alkyl and aryl groups may be alkyl groups, halo or alkoxy.
 29. The copper metal plating bath of claim 27, wherein the levelers comprise alkylated polyalkyleneimines, organic sulfo sulfonates, dyes of the phenazine class and phenazine azo dyes of mixtures thereof.
 30. A method of plating a metal on a substrate comprising: contacting the substrate with a metal plating bath; and applying sufficient current density to the plating bath to deposit the metal on the substrate; the plating bath comprises a metal salt from a metal selected from the group consisting of copper, gold, silver, palladium, platinum, cobalt, cadmium, chromium, bismuth, indium, lead, tin, rhodium, iridium, ruthenium, zinc, and mixtures thereof; and an additive consumption inhibiting compound having the formula: R¹—X—R² where X is —S(O)_(n)—, —S(O)_(n)—S(O)_(p)—, —S(O)_(n)—S(O)_(p)—S(O)_(q)—, —S(O)_(n)—S(O)_(p)—S(O)_(q)—S(O)_(u)—, —S(O)_(n)—S(O)_(p)—S(O)_(q)—S(O)_(u)—S(O)_(v)—, —S(O)_(n)—S(O)_(p)—S(O)_(q)—S(O)_(u)—S(O)_(v)—S(O)_(w)—, —(S(O)_(z))_(m)—(CH₂)_(y)—(S(O)_(z′))_(m′), or —SO₂—S—(CH₂)_(y)—S—SO₂—, where n, p, q, u, v, w, z and z′ are each independently an integer from 0 to 2, and m and m′ are independently an integer from 1 to 6 and y is an integer of from 2 to 4; and R¹ and R² are independently halogen, —OH, (C₁-C₂₀) linear, branched, or cyclic alkyl, (C₂-C₂₀) linear, branched, or cyclic alkenyl, (C₂-C₂₀) linear, or branched alkynyl; (C₁-C₂₀) alkyl-O(C₂-C₃O)₁R⁵, (C₁-C₁₂)alkylphenyl-O(C₂-C₃O)₁R⁵, or -phenyl-O(C₂-C₃O)₁R⁵, where t is an integer of from 1-500 and R⁵ is hydrogen, (C₁-C₄)alkyl, or phenyl; the alky, alkenyl and alkynyl groups may be unsubstituted or substituted; or X is a heteroatom selected from S, O, N, or N substituted with (C₁-C₆) alkyl or a tosyl group, and R¹ and R² may be taken together along with the atoms to which they are attached to form a 5 to 18 membered heterocyclic ring unsubstituted or substituted, saturated or unsaturated comprising 1 to 8 heteroatoms, the heterocyclic ring optionally contains one or more carbonyls.
 31. The metal plating bath of claim 30, wherein the alkyl, alkenyl, alkynyl or aryl are substituted with one or more of halogen, aryl, silyl, silane, —SH, —CN, —SCN, —C═NS, —Si(OH)₃, —NO₂, —P(R)₂, —OH, —COOH, —COO(C₁-C₁₂) alkyl, —CO(C₁-C₁₂)alky, NR³R⁴, —PO₃M, or —SO₃M with the proviso that when —SO₃M or —PO₃M is a substituent X is more than two sulfur atoms in a chain, M is hydrogen, or an alkali metal, R is a hydrogen or a halogen, and R³ and R⁴ are independently hydrogen, halogen, aryl or (C₁-C₁₂) linear or branched alkyl.
 32. The metal plating bath of claim 30, wherein the 5 to 18 membered heterocyclic ring is substituted on one or more carbons of the ring with —COOH, —OH, (C₁-C₆) alkyl, hydroxy (C₁-C₆) alkyl, or carboxyl (C₁-C₆) alkyl.
 33. The method of claim 30, wherein the additive consumption inhibiting compound comprises methyl sulfoxide, methyl sulfone, tetratmethylene sulfoxide, thioglycolic acid, 2 (5H) thiophenone, 1,4-dithiane, trans-11,2-dithiane, tetrahydrothiophene-3-one, 3-thiophenemethanol, 1,3,5-trithiane, 3-thiophenacetic acid, thiotetronic acid, crown ethers, crown thioethers, tetrapyrids, phenyl vinyl sulfone, thioctic acid, 4-hydroxy-benzene sulfonic acid, or mixtures thereof.
 34. The method of claim 33, wherein the crown ethers comprise 12-crown-4,15-crown-5, 18-crown-6, or (+)-(18-crown-6)-2,3,11,12-tetracarboxylic acid.
 35. The method of claim 33, wherein the tetrapyrids comprise 1,5,9,13-tetrathiacyclohexadecane, 1,5,9,13-tetrathiacyclo-hexadecane-3,11-diol, or 1,4,7,10-tetrathiacyclodecane.
 36. The method of claim 30, wherein the hetero-cyclic nitrogen compound comprises 1,4,7,10,13,16-hexamethyl-1,4,7,10,13,16-hexaazacyclooctadecane, 1,4,7,10-tetra-p-tosyl-1,4,7,10-tetraazacyclododecane or 1,4,10,13-tetraoxa-7,16-diazacyclooctadecane.
 37. The method of claim 30, wherein the additive consumption inhibiting compound comprises from about 0.001 g/L to about 100 g/L of the bath.
 38. The method of claim 30, further comprising brighteners, levelers, hardeners, wetting agents, malleability modifiers, ductility modifiers, deposition modifiers, suppressors or mixtures thereof.
 39. The method of claim 38, wherein the brighteners comprise compounds of the formula: HO₃S—R¹¹—SH; HO₃S—R¹¹—S—S—R¹¹—SO₃H, where R¹¹ is C₁-C₆ or an aryl group; and HO₃S—Ar—S—S—Ar—SO₃H, where Ar is phenyl or naphthyl; and the alkyl and aryl groups may be unsubstituted or substituted with an alkyl group, a halo or an alkoxy.
 40. The method of claim 30, wherein the substrate is a printed wiring board, an integrated circuit, an electrical contact surface, a connector, an electrolytic foil, a silicon wafer, a semi-conductor, a lead frame, an optoelectronic component, a solder bump on a silicon wafer, a decorative article, a sanitary appliance, and the like.
 41. A method for plating copper metal on a substrate comprising: contacting the substrate with a metal plating bath; and applying sufficient current density to the plating bath to deposit the metal on the substrate; the copper metal plating bath comprises a copper salt and an additive inhibiting compound having the formula: R¹—X—R² where X is —S(O)_(n)—, —S(O)_(n)—S(O)_(p)—, —S(O)_(n)—S(O)_(p)—S(O)_(q)—, —S(O)_(n)—S(O)_(p)—S(O)_(q)—S(O)_(u)—, —S(O)_(n)—S(O)_(p)—S(O)_(q)—S(O)_(u)S(O)_(v)—, —S(O)_(n)—S(O)_(p)—S(O)_(u)—S(O)_(v)—S(O)_(w)—, —(S(O)_(z))_(m)—(CH₂)_(y)—(S(O)_(z′))_(m′)—, or —SO₂—S—(CH₂)_(y)—S—SO₂—, where n, p, q, u, v, w, z and z′ are each independently an integer from 0 to 2, and m and m′ are independently an integer of from 1 to 6, and y is an integer of from 2 to 4; R¹ and R² are each independently halogen, —OH, (C₁-C₂₀) linear, branched or cyclic alkyl, (C₂-C₂₀) linear, branched or cyclic alkenyl, (C₂-C₂₀) linear, or branched alkynyl; or (C₁-C₂₀) alkyl-O(C₂-C₃O)₁R⁵, (C₁-C₁₂) alkylphenyl-O(C₂-C₃O)₁R⁵, or -phenyl-O(C₂-C₃O)₁R⁵, where t is an integer of from 1-500 and R⁵ is hydrogen, (C₁-C₄) alkyl or phenyl; the alkyl, alkenyl, alkynyl may be unsubstituted or substituted; or X is a heteroatom selected from S, O, N, or N substituted with (C₁-C₆) alkyl or a tosyl group, and R¹ and R² may be taken together along with the atoms to which they are attached to form a 5 to 18 membered heterocyclic ring unsubstituted or substituted, saturated or unsaturated comprising 1 to 8 heteroatoms, the heterocyclic ring optionally contains one or more carbonyls.
 42. The method of claim 41, wherein the alkyl, alkenyl, or alkynyl may be substituted with one or more of halogen, aryl, silyl, silane, —SH, —CN, —SCN, —C═NS, —Si(OH)₃, —NO₂, —P(R)₂, —OH, COOH, —COO(C₁-C₁₂) alkyl, —CO(C₁-C₁₂) alkyl, NR³R⁴, —PO₃M or —SO₃M with the proviso that when —SO₃M or —PO₃M is a substituent X is more than two sulfur atoms in a chain, M is hydrogen, or an alkali metal, R is hydrogen or halogen, and R³ and R⁴ are independently hydrogen, halogen, aryl, or (C₁-C₁₂) linear or branched alkyl.
 43. The method of claim 41, wherein the 5 to 18 membered heterocyclic ring is substituted on one or more carbons of the ring with —COOH, —OH, (C₁-C₆) alkyl, hydroxy (C₁-C₆) alky, or carboxyl (C₁-C₆) alkyl.
 44. The method of claim 41, wherein the additive consumption inhibiting compound comprises methyl sulfoxide, methyl sulfone, tetramethylene sulfoxide, thioglycolic acid, 2 (5H) thiophenone, 1,4-dithiane, trans-1,2-dithiane, tetrhydrothiophenone-3-one, 3-thiophenemethanol, 1,3,5-trithiane, 3-thiophenacetic acid, thiotetronic acid, crown ethers, crown thioethers, tetrapyrids, phenyl vinyl sulfone, thioctic acid, 4-hydroxy-benzene sulfonic acid, or mixtures thereof.
 45. The method of claim 44, wherein the crown ethers comprise 12-crown-4,15-crown-5, 18-crown-6, or (+)-(18-crown-6)-2,3,11,12-tetracarboxylic acid.
 46. The method of claim 44, wherein the tetrapyrids comprise 1,5,9,13-tetrathiacyclo-hexadecane-3,11-diol, or 1,4,7,10-tetrathiacyclodecane.
 47. The method of claim 41, wherein the heterocyclic nitrogen compounds comprise 1,4,7,13,16-hexamethyl-1,4,7,10,13,16-hexaazacyclooctadecane, 1,4,7,10-tetra-p-tosyl-1,4,7,10-tetraazacyclododecane, or 1,4,10,13-tetraoxa-7,16-diazacyclooctadecane.
 48. The method of claim 41, wherein the additive consumption inhibiting compound comprises from about 0.001 g/L to about 100 g/L of the bath.
 49. The method of claim 41, further comprising brighteners, levelers, hardeners, wetting agents, malleability modifiers, ductility modifiers, deposition modifiers, suppressors or mixtures thereof.
 50. The method of claim 49, wherein the brighteners comprise compounds of the formula: HO₃S—R¹¹—SH; HO₃S—R¹¹—S—S—R¹¹—SO₃H, where R¹¹ is C₁-C₆ alkyl or an aryl group; or HO₃S—Ar—S—S—Ar—SO₃H, where Ar is phenyl or naphthyl; the C₁-C₆ alkyl and aryl group may be unsubstituted or substituted with an alkyl group, halo or alkoxy group.
 51. The method of claim 41, wherein the substrate comprises a printed wiring board, an integrated circuit, an electrical contact surface, a connector, an electrolytic foil, a silicon wafer, a semi-conductor, a lead frame, an optoelectronic component, a solder bump on a wafer, a decorative article, a sanitary appliance, and the like.
 52. An apparatus for electroplating a substrate comprising an electrical power source electrically connected with an insoluble anode and a cathode such that an electrical current can pass through the insoluble anode and the cathode, the insoluble anode and the cathode are in contact with a metal plating bath comprising a salt of a metal selected from the group consisting of copper, gold, silver, palladium, platinum, cobalt, cadmium, chromium, bismuth, indium, rhodium, iridium, ruthenium, zinc or mixtures thereof, and an additive consumption inhibiting compound, the additive consumption inhibiting compound having a formula: R¹—X—R² where X is —S(O)_(n)—, —S(O)_(n)—S(O)_(p)—, —S(O)_(n)S(O)_(p)—S(O)_(q)—, —S(O)_(n)—S(O)_(p)—S(O)_(q)—S(O)_(u), —S(O)_(n)—S(O)_(p)—S(O)_(q)—S(O)_(u)—S(O)_(v)—, —(S(O)_(z))_(m)—(CH₂)_(y)—(S(O)_(z)′)_(m′)—, or —SO₂—S—(CH₂)_(y)—S—SO₂—, where n, p, q, u, v, w, z and z′ are each independently an integer from 0 to 2, and m and m′ are each independently an integer from 1 to 6 and y is an integer of from 2 to 4; R¹ and R² each are independently —OH, halogen, (C₁-C₂₀) linear, branched, cyclic alkyl, (C₂-C₂₀) linear, branched, or cyclic alkenyl, (C₂-C₂₀) linear, or branched alkynyl; (C₁-C₂₀) alkyl-O(C₂-C₃O)₁R⁵, (C₁-C₁₂) alkylphenyl-O(C₂-C₃O)₁R⁵, or -phenyl-O(C₂-C₃O)₁R⁵, where t is an integer of from 1-500 and R⁵ is hydrogen, (C₁-C₄)alkyl or phenyl; the alkyl, alkenyl and alkynyl groups may be unsubstituted or substituted; or X is a heteroatom selected from S, O, N, or N substituted with (C₁-C₆) alkyl or tosyl group, and R¹ and R² may be taken together along with the atoms to which they are attached to form a 5 to 18 membered heterocyclic ring unsubstituted or substituted, saturated or unsaturated comprising 1 to 8 heteroatoms, the heterocyclic ring optionally contains one or more carbonyls.
 53. The apparatus of claim 52, wherein the alkyl, alkenyl, alkynyl, and aryl groups are substituted with one or more of halogen, aryl, silyl, silane, —SH, —CN, —SCN, —C═NS, —Si(OH)₃, NO₂, —P(R)₂, —OH, —COOH, —CO(C₁-C₁₂), —COO(C₁-C₁₂) alkyl, NR³R⁴, —PO₃M, or —S₃M with the proviso that when —SO₃M or —PO₃M is a substituent X is more than two sulfur atoms in a chain, M is hydrogen, or an alkali metal, R is hydrogen or halogen, and R³ and R⁴ are independently hydrogen, halogen, aryl or (C₁-C₁₂) linear or branched alkyl.
 54. The apparatus of claim 52, wherein the 5 to 18 membered heterocyclic ring is substituted on one or more of the carbons of the ring with —COOH, —OH, (C₁-C₆) alkyl, hydroxy (C₁-C₆) alky, or carboxyl (C₁-C₆) alkyl.
 55. The apparatus of claim 52, wherein the additive consumption inhibiting compound comprises from about 0.001 g/L to about 100.0 g/L of the bath.
 56. The apparatus of claim 52, wherein the metal plating bath further comprises brighteners, levelers, hardeners, wetting agents malleability modifiers, ductility modifiers, deposition modifiers or suppressors.
 57. The apparatus of claim 52, wherein a pH of the metal plating bath is from 0 to about 8.0.
 58. The apparatus of claim 52, wherein the metal salt comprises copper halides, copper sulfate, copper alkane sulfonate, copper alkanol sulfonate, or mixtures thereof.
 59. The apparatus of claim 52, wherein the insoluble anode comprises metals of cobalt, nickel, ruthenium, rhodium, palladium, iridium, or platinum.
 60. The apparatus of claim 59, wherein the insoluble anode further comprises metals of titanium, zirconium, hafnium, vanadium, niobium, or tantalum.
 61. The apparatus of claim 60, wherein the insoluble anode further comprises metals of beryllium, calcium, strontium, barium, scandium, yttrium, lanthanum, or rare earth elements.
 62. The apparatus of claim 52, wherein the insoluble anode comprises iridium dioxide.
 63. The apparatus of claim 52, wherein the cathode comprises a wiring board, an integrated circuit, an electrical contact surface, a connector, an electrolytic foil, a silicon wafer, a semi-conductor, a lead frame, an optoelectronic component, a solder bump, a decorative article, a sanitary appliance and the like.
 64. The apparatus of claim 52, wherein the insoluble anode and the cathode have a current density of from about 1 to about 1000 amps/ft². 